Ph.D.Associate Professor
E-mail: xfli@hust.edu.cn
RESEARCH AREAS AND COURSES
ü E-mode GaN MIS-HEMTs and MIS-FETs
ü High breakdown voltages of GaN-on-Si power transistor
ü SiC MOSFET
EDUCATION
ü Nanjing University, College of Engineering and Applied Sciences, PhD (2008/9-2013/12)
ü Harbin Engineering University, College of Materials Science and Chemical Engineering, Bachelor (2004/9-2008/7)
WORK EXPERIENCE
ü 2016/11-present
Huazhong University of Science & Technology, School of Electrical and Electronic Engineering, Associate Professor
ü 2014/2-2016/10
Huazhong University of Science & Technology, School of Electrical and Electronic Engineering, Assistant Professor
SELECTED PUBLICATIONS
Ø JOURNAL
1. X. Li, Z. Yu, X. Xiong, T. Li, T. Gao, R. Wang, R. Huang, and Y.Q. Wu*, “High-Speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit”, Science Advances. 5, eaau3194, 2019
2. T. Li , X. Li , M. Tian , Q. Hu , X. Wang , S. Li and Y.Q. Wu*, “Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructure”, Nanoscale, 11, 4701-4706, 2019
3. M. Tian, B. Hu, H. Yang, C. Tang, M. Wang, Q. Gao, X. Xiong, Z. Zhang, T. Li, X. Li, C. Gu, Y.Q. Wu*, “Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors”, Advanced Electronic Materials，2019, 1800711
4. M. Wang, X. Li, X. Xiong, J. Song, C. Gu, D. Zhan, Q. Hu, S. Li and Y.Q. Wu*, “High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition”, IEEE Electron Device Letters 40, 3, 419-422, 2019
5. M. Tian, X. Li, Q. Gao, X. Xiong, Zhenfeng Zhang, Y.Q. Wu*, “Improvement of Conversion Loss of Resistive Mixers Using Bernal-stacked Bilayer Graphene”, IEEE Electron Device Letters 40, 325 – 328, 2019
6. S. Li, Q. Hu, X. Wang, T. Li, Xuefei Li, Y.Q. Wu*, “Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOx as Gate Dielectric”, IEEE Electron Device Letters 40, 295 – 298, 2019
7. L. Liang, W. Li, S. Li, X. Li and Y.Q. Wu*, “Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric”, AIP Advances 8, 125314, 2018
8. Q. Gao, Z. Zhang, X. Xu, J. Song, X. Li and Y.Q. Wu*, “Scalable high performance radio frequency electronics based on large domain bilayer MoS2”, Nature Communications 9, 4778, 2018
9. Z. Zhang, X. Xu, J. Song, Q. Gao, S. Li, Q. Hu, X. Li, and Y.Q. Wu*, “High-performance transistors based on monolayer CVD MoS2 grown on molten glass”, Applied Physics Letters 113, 202103, 2018
10. X. Li, X. Xiong, T. Li, T. Gao, Y.Q. Wu*, “Optimized Transport of Black Phosphorus Top Gate Transistors using Alucone Dielectrics”, IEEE Electron Device Letters 39, 12, 1952 – 1955, 2018
11. Q. Hu, S. Li, T. Li, X. Wang, X. Li and Y.Q. Wu*, “Channel Engineering of Normally-Off AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-κ Dielectric”, IEEE Electron Device Letters 39, 9, 1377 – 1380, 2018
12. T. Li, M. Tian, S. Li, M. Huang, X. Xiong, Q. Hu, S. Li, X. Li, Y.Q. Wu*, “Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures”, Advanced Electronic Materials 4, 1800138, 2018
13. M. Tian, X. Li, T. Li, Q. Gao, X. Xiong, Q. Hu, M. Wang, X. Wang, and Y.Q. Wu*, “High Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies”, ACS Applied Materials Interfaces 10 (24), 20219–20224, 2018
14. T. Gao, X. Li, X. Xiong, M. Huang, T. Li, and Y.Q. Wu*, “Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors”, IEEE Electron Dev. Lett. 39, 5, 769 – 772, 2018
15. X. Xiong, X. Li, M. Huang, T. Li, T. Gao and Y.Q. Wu*, “High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric”, IEEE Electron Dev. Lett. 39, 1, 127 – 130, 2018
16. X. Li, T. Li, Z. Zhang, X. Xiong, S. Li and Y.Q. Wu*, “Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors”, IEEE Electron Dev. Lett. 39, 131-134, 2018
17. X. Li, R. Grassi, S. Li, T. Li, X. Xiong, T. Low*, and Y.Q. Wu*, “Anomalous temperature dependence in metal-black phosphorus contact”, Nano Lett., 18 (1), 26–31, 2018
18. X. Li, X. Xiong, T. Li, S. Li, Z. Zhang and Y.Q. Wu*, “Effect of Dielectric Interface on the Performance of MoS2 Transistors”, ACS Applied Materials & Interfaces, 9 (51), 44602–44608, 2017
19. M. Huang, S. Li, Z. Zhang, X. Xiong, X. Li and Y.Q. Wu*, “Multifunctional high-performance van der Waals heterostructures”, Nature Nanotechnology, Nature Nanotechnology 12, 1148–1154, 2017
20. Q. Gao, X. Li, M. Tian, X. Xiong, Z. Zhang and Y.Q. Wu*, "Short-Channel Graphene Mixer With High Linearity," IEEE Electron Device Letters, vol. 38, no. 8, pp. 1168-1171, Aug. 2017
21. T.Y. Li, Z. Zhang, X.F. Li, M.Q. Huang, S.C Li, S.M. Li, and Y.Q. Wu*, “High field transport of high performance black phosphorus transistors”, Appl. Phys. Lett. 110, 163507，2017
22. X. Li, Y. Du, M. Si, L. Yang, S. Li, T. Li, X. Xiong, P. Ye and Y.Q. Wu*, “Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors”, Nanoscale, 8, 3572–3578, 2016
23. M. Huang, M. Wang, C. Chen, Z. Ma, X. Li, J. Han, and Y.Q. Wu*,“Broadband Black-Phosphorus Photodetectors with High Responsivity” Advanced Materials, Volume 28, Issue 18, Pages 3481–3485, May 11, 2016
24. S. Li, W. Luo, J. Gu, X. Cheng, P. D. Ye, and Y.Q. Wu*, “Large, tunable magnetoresistance in non-magnetic III-V nanowires” Nano Lett., 2015, 15 (12), pp 8026–8031. November 13, 2015
25. X. Li, X. Lu, T. Li, W. Yang, J. Fang, G. Zhang, and Y.Q. Wu*, “Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride”, ACS Nano.,2015, 9 (11), pp 11382–11388, October 4, 2015
26. X. Li, L. Yang, M. Si, S. Li, M. Huang, P. Ye, Y.Q. Wu*, “Performance Potential and Limit of MoS2 Transistors”，Advanced Materials, Volume 27, Issue 9, pages 1547–1552, March 4, 2015
RESEARCH PROJECTS
ü Radio frequency transistors based on epitaxy growth high-quality MoS2, supported by National Natural Science Foundation of China, No.: 61874162
